THE LAYERED RHETORICAL PRESIDENCY
- 期刊名称Critical Review
- 作者Crockett, David A.
- 卷第19卷
- 印刷ISSN0891-3811
- 电子ISSN1933-8007
- 文件大小77.15KB
- 发表时间2007-01
- DOI10.1080/08913810701766173
- 页码299-314
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong ()] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - 2005 IEEE Conference on Electron Devices and Solid-State Circuits2005
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Howloon, Hong Kong (2005.12.19-2005.12.21)] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Conference committee2005
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong ()] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Forward2005
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong ()] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Covers2005
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong (19-21 Dec. 2005)] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Advanced Germanium MOS Devices and TechnologyChi On Chui, Krishna C. Saraswat · 2005
[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2005.02.2-2005.02.4)] Conference on Electron Devices, 2005 Spanish - RF and microwave devices2005
[IEEE Conference on Electron Devices, 2005 Spanish - Tarragona, Spain (2005.02.2-2005.02.4)] Conference on Electron Devices, 2005 Spanish - Optoelectronic and photonic devices2005
[IEEE 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Hong Kong ()] 2005 IEEE Conference on Electron Devices and Solid-State Circuits - Breaker pages2005
Angle-resolved photoelectron spectroscopy on gate insulatorsT. Hattori; H. Nohira; S. Shinagawa; M. Hori; M. Kase; T. Maruizumi · 2007
Angle-resolved XPS study on chemical bonds in ultrathin silicon oxynitride filmsS. Shinagawa; H. Nohira; T. Ikuta; M. Hori; M. Kase; T. Hattori · 2005
Electric Characteristics of Si3N4Films Formed by Directly Radical Nitridation on Si(110) and Si(100) SurfacesM. Higuchi; T. Aratani; T. Hamada; S. Shinagawa; H. Nohira; E. Ikenaga; A. Teramoto; T. Hattori; S. Sugawa; T. Ohmi · 2007