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[IEEE 2010 10th IEEE International Conference on Solid Dielectrics (ICSD) - Potsdam, Germany (2010.07.4-2010.07.9)] 2010 10th IEEE International Conference on Solid Dielectrics - Electrical tree growth in extruded s-polypropyleneHolto, Jorunn; Ildstad, Erling · 2010
[IEEE 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO) - Ilsan, Gyeonggi-Do, Korea (South) (2010.08.17-2010.08.20)] 10th IEEE International Conference on Nanotechnology - Synthesis of highly luminescent Cd (Se,S) nanocrystalsYoung-Kuk Kim, ; Kookchae Chung, ; Young-Sang Cho, ; Chul-Jin Choi, · 2010
[IEEE 2010 10th IEEE/ACM International Conference on Cluster, Cloud and Grid Computing - Melbourne, Australia (2010.05.17-2010.05.20)] 2010 10th IEEE/ACM International Conference on Cluster, Cloud and Grid Computing - Cluster Computing as an Assembly Process: Coordination with S-NetGrelck, Clemens; Julku, Jukka; Penczek, Frank; Shafarenko, Alex · 2010
[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A 10-bit 1MS/s low power SAR ADC for RSSI applicationZeng, Zhen; Dong, Chuan-Sheng; Tan, Xi · 2010
[IEEE 2010 IEEE 10th Conference on Nanotechnology (IEEE-NANO) - Ilsan, Gyeonggi-Do, Korea (South) (2010.08.17-2010.08.20)] 10th IEEE International Conference on Nanotechnology - Layer by layer self assembly of Polyelectrolytes and S-layersHabibi, Neda; Caneva Soumetz, Federico; Pastorino, Laura; Herrera, Oscar; Ruggiero, Carmelina · 2010
[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A 22mW 10-bit 150-MS/s pipelined ADC in 1.2V 65nm CMOSWang, Jiacheng; Zhu, Di; Guo, Lele; Jin, Rui; Wan, Peiyuan; Lin, Pingfen · 2010
[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A 200MS/s 10-bit current-steering D/A converter with on-chip testbenchWang, Shaopeng; Ren, Yannan; Yang, Changyi; Li, Fule; Wang, Zhihua · 2010
[IEEE 2010 IEEE 6th International Conference on Wireless and Mobile Computing, Networking and Communications (WiMob) - Niagara Falls, NU, Canada (2010.10.11-2010.10.13)] 2010 IEEE 6th International Conference on Wireless and Mobile Computing, Networking and Communications - An ID-based authentication scheme for the IEEE 802.11s Mesh NetworkBoudguiga, Aymen; Laurent, Maryline · 2010
Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative studyKumar, Mirgender; Dubey, Sarvesh; Tiwari, Pramod Kumar; Jit, S. · Current Applied Physics · 2013
On-current modeling of short-channel double-gate (DG) MOSFETs with a vertical Gaussian-like doping profileDubey, Sarvesh; Tiwari, Pramod Kumar; Jit, S. · Journal of Semiconductors · 2013
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETsPramod Kumar Tiwari; Sarvesh Dubey; Kunal Singh; S. Jit · 2012
Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon–Germanium-on-Insulator (SGOI) MOSFETsKumar, Mirgender; Dubey, Sarvesh; Tiwari, Pramod Kumar; Jit, S. · Superlattices and Microstructures · 2013
Analytical Modeling of Threshold Voltage of Short-Channel Strained-Si on Silicon–Germanium-On-Insulator (SGOI) Metal–Oxide–Semiconductor Field-Effect Transistors with Localized ChargesKumar, Mirgender; Dubey, Sarvesh; Kumar Tiwari, Pramod; Jit, S. · Journal of Computational and Theoretical Nanoscience · 2014
A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistorsTiwari, Pramod Kumar; Dubey, Sarvesh; Singh, Manjeet; Jit, S. · Journal of Applied Physics · 2010
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical Gaussian-like doping profileDubey, Sarvesh; Tiwari, Pramod Kumar; Jit, S. · Journal of Applied Physics · 2010