![[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETs]()
[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETsGowda, S.; Mathur, G.; Qiliang Li, ; Surthi, S.; Qian Zhao, ; Lindsey, J.S.; Bocian, D.F.; Misra, V. · 2004