Isolated substitutional cobalt and Co-related complexes in silicon
- 期刊名称Journal of Applied Physics
- 作者Scheffler, L.; Kolkovsky, Vl.; Weber, J.
- 卷第113卷
- 期第18期
- 印刷ISSN0021-8979
- 文件大小751.94KB
- 发表时间2013
- DOI10.1063/1.4804321
Electrical levels in nickel doped siliconScheffler, L.; Kolkovsky, Vl.; Weber, J. · Journal of Applied Physics · 2014
Schottky contacts on differently grown n-type ZnO single crystalsKolkovsky, Vl.; Scheffler, L.; Hieckmann, E.; Lavrov, E. V.; Weber, J. · Applied Physics Letters · 2011
Identification of titanium-hydrogen complexes with up to four hydrogen atoms in siliconScheffler, L.; Kolkovsky, Vl.; Weber, J. · Journal of Applied Physics · 2015
Transition metals (Ti and Co) in silicon and their complexes with hydrogen: A Laplace DLTS studyKolkovsky, Vl.; Scheffler, L.; Weber, J. · Physica B: Condensed Matter · 2014
Single and double acceptor-levels of a carbon-hydrogen defect in n-type siliconStübner, R.; Scheffler, L.; Kolkovsky, Vl.; Weber, J. · Journal of Applied Physics · 2016
Isolated Ti in Si: Deep level transient spectroscopy, minority carrier transient spectroscopy, and high-resolution Laplace deep level transient spectroscopy studiesScheffler, L.; Kolkovsky, Vl.; Weber, J. · Journal of Applied Physics · 2015
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013