Morphology and Electrical Performance Improvement of NiGe/Ge Contact by P and Sb Co-implantation
- 期刊名称IEEE Electron Device Letters
- 作者Li, Zhiqiang; An, Xia; Li, Min; Yun, Quanxin; Lin, Meng; Li, Ming; Zhang, Xing; Huang, Ru
- 卷第34卷
- 期第5期
- 印刷ISSN0741-3106
- 电子ISSN1558-0563
- 文件大小1535.92KB
- 发表时间2013-05
- DOI10.1109/led.2013.2252458
- 页码596-598
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