![Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si]()
Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted SiLibertino, S.; Benton, J. L.; Jacobson, D. C.; Eaglesham, D. J.; Poate, J. M.; Coffa, S.; Kringho̸j, P.; Fuochi, P. G.; Lavalle, M. · Applied Physics Letters · 1997