![[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantation]()
[IEEE 1996 IEEE Hong Kong Electron Devices Meeting - Hong Kong (29 June 1996)] Proceedings 1996 IEEE Hong Kong Electron Devices Meeting - SIMNI SOI formed by high intensity nitrogen implantationPoon, M.C.; Wong, S.P.; Lam, Y.W.; Chu, P.K.; Sin, J.K.O. · 1996