Migration and Human Security in the Asia–Pacific Region
- 期刊名称Global Change, Peace & Security
- 作者Taylor, Savitri
- 卷第19卷
- 期第3期
- 印刷ISSN1478-1158
- 电子ISSN1478-1166
- 文件大小79.86KB
- 发表时间2007-10
- DOI10.1080/14781150701599333
- 页码171-174
A new analytical model for optimizing SOI LDMOS with step doped drift regionYufeng Guo; Zhaoji Li; Bo Zhang · 2006
A new structure and its analytical breakdown model of high voltage SOI device with Step Unmovable Surface Charges of buried oxide layerYufeng Guo; Zhaoji Li; Bo Zhang; Xiaorong Luo · 2006
[IEEE 2007 5th International Conference on Communications, Circuits and Systems - Kokura (2007.07.11-2007.07.13)] 2007 International Conference on Communications, Circuits and Systems - A new two dimensional analytical breakdown model of SOI RESURF devicesYufeng Guo, ; Zhaoji Li, ; Bo Zhang, · 2007
[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - Multi-reversed-junction LDMOST with very high breakdown voltage per unit lengthCheng, Jianbing; Zhang, Bo; Li, Zhaoji; Guo, Yufeng; Yu, Shujuan · 2010
[IEEE 2004 International Conference on Communications, Circuits and Systems - Chengdu, China (27-29 June 2004)] 2004 International Conference on Communications, Circuits and Systems (IEEE Cat. No.04EX914) - A breakdown model of RESURF SOI device with multi-regions fixed interface chargesBo Zhang, ; Yufeng Guo, ; Zhaoji Li, ; Xiaorong Luo, ; Jian Fang, · 2004
[IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Exposition Proceedings - Chengdu, China (29 June-1 July 2002)] IEEE 2002 International Conference on Communications, Circuits and Systems and West Sino Expositions - Breakdown theory of a new SOI composite structureZhaoji Li, ; Luyang Luo, ; Yufeng Guo, ; Bo Zhang, ; Jian Fang, ; Jun Zeng, · 2002
[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - An analytical breakdown model of high voltage SOI device considering the modulation of step buried-oxide interface chargesYufeng Guo, ; Zhaoji Li, ; Bo Zhang, ; Jian Fang, · 2004