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As) heterointerfacesGilliland, G. D.; Wolford, D. J.; Kuech, T. F.; Bradley, J. A. · Physical Review B · 1994
Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfacesTadamasa Kimura; Masahiro Saito; Satoshi Tachi; Riichiro Saito; Michio Murata; Takeshi Kamiya · 1997
The chemical structure of the ZnO/SiC heterointerface as revealed by electron spectroscopiesMu, Rui; Steigert, Alexander; Lin, Nanying; Wilks, Regan; Bär, Marcus; Zhang, Yufeng · Journal of Physics D: Applied Physics · 2015
Intrinsic, heterointerface excitonic states in GaAs(n)/Al0.3Ga0.7As( p) double heterostructuresGilliland, G. D. · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures · 1991
Interface strain at the lattice-matched In0.53Ga0.47As/InP(001) heterointerfaceHybertsen, Mark S. · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures · 1990
Trions as a probe of spin injection through II–VI magnetic/non-magnetic heterointerfaceM Ghali; J Kossut; E Janik; M Kutrowski; Ł Kłopotowski; M Potemski; F Teran · 2002
Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structuresItoh, T.; Griem, T.; Wicks, G.W.; Eastman, L.F. · Electronics Letters · 1985
heterointerfacesArent, D. J. · Physical Review B · 1990
P: An investigation using reflectance-difference spectroscopyLuo, J. S.; Olson, J. M.; Kurtz, Sarah R.; Arent, D. J.; Bertness, K. A.; Raikh, M. E.; Tsiper, E. V. · Physical Review B · 1995
Anisotropic Electrical Transport and Surface Microstructure in GalnP2Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Bertness, K. A.; Kramer, C.; Matson, R.; Arent, D. J.; Olson, J. M. · MRS Proceedings · 1992
CuPt-B Ordered Microstructures in GaInP and GaInAs FilmsAhrenkiel, S. P.; Jones, K. M.; Matson, R. J.; Al-Jassim, M. M.; Zhang, Y.; Mascarenhas, A.; Friedman, D. J.; Arent, D. J.; Olson, J. M.; Hanna, M. C. · MRS Proceedings · 1999
Ordered and randomly disordered AlAs/GaAs short-period superlatticesArent, D. J. · Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures · 1994
Determination of the Order Parameter by Quantitative Tem TechniquesBode, Michael H.; Ahrenkiel, S. P.; Kurtz, S. R.; Bertness, K. A.; Arent, D. J.; Olson, J. · MRS Proceedings · 1995
Optical Properties and Electroluminescence of Ordered and Disordered ALAS/GAAS SuperlatticesArent, D. J.; Alonso, R. G.; Horner, G. S.; Kibbler, A. E.; Olson, J. M.; Yin, X.; Delong, M. C.; Springthorpe, A. J.; Majeed, A.; Mowbray, D. J.; Skolnick, M. S. · MRS Proceedings · 1993
Phonon frequencies of goldSingh, Natthi; Prakash, Satya · Physical Review B · 1974
Graphene nanoribbons subject to gentle bendsKoskinen, P. · Physical Review B · 2012
Topological p-n junctionWang, Jing; Chen, Xi; Zhu, Bang-Fen; Zhang, Shou-Cheng · Physical Review B · 2012
Nonlocal feedback in ferromagnetic resonanceBose, Thomas; Trimper, Steffen · Physical Review B · 2012
Dissipationless phonon Hall viscosityBarkeshli, Maissam; Chung, Suk Bum; Qi, Xiao-Liang · Physical Review B · 2012
Surface states of topological insulatorsZhang, Fan; Kane, C. L.; Mele, E. J. · Physical Review B · 2012
Graphene hyperlens for terahertz radiationAndryieuski, Andrei; Lavrinenko, Andrei V.; Chigrin, Dmitry N. · Physical Review B · 2012
Persistent current induced by quantum lightKibis, O. V. · Physical Review B · 2012