Opera and Concerts in London
- 期刊名称The Musical Times
- 卷第102卷
- 期第1417期
- 印刷ISSN0027-4666
- 文件大小427.96KB
- 发表时间1961-03
- DOI10.2307/949415
- 页码161-164
Progress in SiC MOSFET ReliabilityHughart, D. R.; Flicker, J. D.; DasGupta, S.; Atcitty, S.; Kaplar, R. J.; Marinella, M. J. · ECS Transactions · 2013
Progress in SiC MOSFET ReliabilityFlicker, J. D.; Hughart, D. R.; Atcitty, S.; Kaplar, R. J.; Marinella, M. · ECS Transactions · 2014
On dielectric breakdown in silicon-rich silicon nitride thin filmsHabermehl, S.; Apodaca, R. T.; Kaplar, R. J. · Applied Physics Letters · 2009
Ultrawide-Bandgap Semiconductors: Research Opportunities and ChallengesTsao, J. Y.; Chowdhury, S.; Hollis, M. A.; Jena, D.; Johnson, N. M.; Jones, K. A.; Kaplar, R. J.; Rajan, S.; Van de Walle, C. G.; Bellotti, E.; Chua, C. L.; Collazo, R.; Coltrin, M. E.; Cooper, J. A.; Evans, K. R.; Graham, S.; Grotjohn, T. A.; Heller, E. R.; Higashiwaki, M.; Islam, M. S.; Juodawlkis, P. W.; Khan, M. A.; Koehler, A. D.; Leach, J. H.; Mishra, U. K.; Nemanich, R. J.; Pilawa-Podgurski, R. C. N.; Shealy, J. B.; Sitar, Z.; Tadjer, M. J.; Witulski, A. F.; Wraback, M.; Simmons, J. A. · Advanced Electronic Materials · 2017
Deep-level defects in InGaAsN grown by molecular-beam epitaxyKaplar, R. J.; Ringel, S. A.; Kurtz, Steven R.; Klem, J. F.; Allerman, A. A. · Applied Physics Letters · 2002
Review—Ultra-Wide-Bandgap AlGaN Power Electronic DevicesKaplar, R. J.; Allerman, A. A.; Armstrong, A. M.; Crawford, M. H.; Dickerson, J. R.; Fischer, A. J.; Baca, A. G.; Douglas, E. A. · ECS Journal of Solid State Science and Technology · 2017
Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N DiodesKing, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, J.; Allerman, A. A.; Moseley, M. W.; Leonard, F.; Talin, A. A.; Kaplar, R. J. · IEEE Transactions on Nuclear Science · 2015
Novel optical probes of InGaN/GaN light-emitting diodes: 1. Electroreflectance Stark spectroscopy, and 2. Time-resolved emissionR. J. Kaplar; S. R. Kurtz; D. D. Koleske · 2005
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013