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[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Improvement of p/sup +/ contact resistance through optimal boron distribution TiSi/sub 2//P/sup +/ interface for 0.18 μm DRAM technology and beyondJeong Su Han, ; Il Gweon Kim, · 2000
[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Improvement of p/sup +/ contact resistance through optimal boron distribution TiSi/sub 2//P/sup +/ interface for 0.18 μm DRAM technology and beyondJeong Su Han, ; Il Gweon Kim, · 2000
AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Photo-Induced Carrier Recombination Properties of Silicon caused by H[sup +] ImplantationFujimoto, Y.; Tatemichi, J.; Inouchi, Y.; Naito, M.; Nagao, Y.; Kogure, K.; Yoshitomi, S.; Kanda, Y.; Hasumi, M.; Sameshima, T.; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio · 2011
AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Characteristics of ZnO Wafers Implanted with 60 keV Sn[sup +] Ions at Room Temperature and at 110 KDang, Giang T.; Kawaharamura, Toshiyuki; Hirao, Takashi; Nitta, Noriko; Taniwaki, Masafumi; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio · 2011
AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Fabrication of Tetragonal and Close-Packed Nano-cell Two-Dimensional Lattices by Ga[sup +] beam on InSb SurfaceTakahashi, Kazuyuki; Ishikawa, Osamu; Yokoyama, Kazuhiro; Taniwaki, Masafumi; Nitta, Noriko; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio · 2011
AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2101: 18th International Conference on Ion Implantation Technology IIT 2010 - Kyoto, (Japan) (6–11 June 2010)] - Improvements in B[sup +] and BF[sub 2]+] Beam Currents Through the Use of Diboron Tetrafluoride (B[sub 2]F[sub 4]) GasTang, Ying; Campbell, Bryce; Davidson, P.; Santiesteban, R. S.; Sweeney, J.; Kaim, R.; Byl, O.; Yedave, S.; Jones, E.; Chambers, B.; McManus, J.; Matsuo, Jiro; Kase, Masataka; Aoki, Takaaki; Seki, Toshio · 2011
Interference of superexchange interactionsEremin, M V; Rakitin, Yu V · Journal of Physics C: Solid State Physics · 1982
Thermoluminescence in polystyrenePender, L F; Fleming, R J · Journal of Physics C: Solid State Physics · 1977
Inhomogeneous relativistic electron gasRajagopal, A K · Journal of Physics C: Solid State Physics · 1978
Localisation of impurity modesDy, K S; Wu, S Y; Wongtawatnugool, C · Journal of Physics C: Solid State Physics · 1979
Quantum delta -dimensional Landauer formulaAzbel, M Ya · Journal of Physics C: Solid State Physics · 1981
The chemical potential of radiationWurfel, P · Journal of Physics C: Solid State Physics · 1982
An amorphous Ising antiferromagnetic modelDe'Bell, K · Journal of Physics C: Solid State Physics · 1980
Nonlinear optics and optical activityJeggo, C R · Journal of Physics C: Solid State Physics · 1972