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Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3

Lattice Parameter Control of Epitaxially Grown Hexagonal LaF3 Films on GaAs(111) Substrates by Incorporation of Orthorhombic YF3

K. Aizawa; H. Ricard; H. Ishiwara
  • 作者K. Aizawa; H. Ricard; H. Ishiwara
  • 文件大小452.60KB
  • 发表时间1992
  • DOI10.1143/JJAP.31.L508
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