![[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Extraction of quasi-ballistic transport parameters in Si double-gate MOSFETs based on Monte Carlo method]()
[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Extraction of quasi-ballistic transport parameters in Si double-gate MOSFETs based on Monte Carlo methodIshida, Ryoma; Koba, Shunsuke; Tsuchiya, Hideaki; Kamakura, Yoshinari; Mori, Nobuya; Uno, Shigeyasu; Ogawa, Matsuto · 2014