ECS Transactions [ECS China Semiconductor Technology International Conference 2010 (CSTIC 2010) - Shanghai, China (March 18 - March 19, 2010)] - Simultaneous Double Side Grinding of Silicon Wafers: A Further Investigation into Grinding Marks Pattern
- 作者Li, Zhichao; Lin, Bin; Sun, Wangping; Zhang, Xiaohong
- 印刷ISSN1938-5862
- 文件大小288.99KB
- 发表时间2010
- DOI10.1149/1.3360650
- 页码395-400
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Dr. CHEMFETJanata, Jiri · 2009
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - OGuder, Mathias; Berger, Matthias; Dalmer, Michael; Kolbesen, Bernd · 2009
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Graphene AerogelsWang, Jian; Ellsworth, Mark · 2009
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Spatially Averaging ElectrodesSheth, Disha; Diefes, Richard; Gratzl, Miklos · 2009
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Effect of SOStaser, John A.; Weidner, J. W. · 2009
ECS Transactions [ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] - Hydrothermal Processed TiOYang, Chien-Hsin; Liao, Shao-Hong · 2009
ECS Transactions [ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] - Nanostructured Mesoporous NbRuKonopka, Daniel; Pylypenko, Svitlana; Ward, Timothy; Atanassov, Plamen · 2009
[ECS 215th ECS Meeting - San Francisco, CA (May 24 - May 29, 2009)] ECS Transactions - Magnetic Properties of LiMohanty, Debasish; Gabrisch, Heike · 2009
Finite-element analysis of convective diffusion equation for semiconductor problems using conjugate gradient methodMasashi Ono; Masami Hane; Kunio Hane; Tokio Suzuki · 1988
Past and Future Technology for Mixed Signal LSIHATASAKO, Kenichi; NITTA, Tetsuya; HANE, Masami; MAEGAWA, Shigeto · IEICE Transactions on Electronics · 2014
Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device SimulationTatsuya Ezaki; Philipp Werner; Masami Hane · 2003
Model for Al Etch-Rate Enhancement at Low TemperaturesUchida, Takashi; Aoki, Hidemitsu; Hane, Masami; Hasegawa, Shinya; Ikawa, Eiji · Japanese Journal of Applied Physics · 1993
Atomic and electronic structures of an interface between silicon and β-cristobaliteHane, Masami; Miyamoto, Yoshiyuki; Oshiyama, Atsushi · Physical Review B · 1990
Electron holography for analysis of deep submicron devices: Present status and challengesIkarashi, Nobuyuki; Toda, Akio; Uejima, Kazuya; Yako, Koichi; Yamamoto, Toyoji; Hane, Masami; Sato, Hiroshi · Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena · 2010
A PAIR-DIFFUSION MODEL FOR ARSENIC IN SILICON CONSIDERING ARSENIC DEACTTVATION-INDUCEDINTERSTITIAL-SDLICON EMISSIONHiroi, Masayuki; Ikezawa, Takeo; Hane, Masami; Matsumoto, Hiroshi · MRS Proceedings · 1997
Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge RoughnessHane, Masami; Ikezawa, Takeo; Ezaki, Tatsuya · MRS Proceedings · 2004