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Epitaxial Si films on Ge(100) grown via H/Cl exchangeGates, S. M.; Koleske, D. D.; Heath, J. R.; Copel, M. · Applied Physics Letters · 1993
Kinetics of atomic hydrogen+adsorbed Br reactions on Si(100) and Si(111) surfacesKoleske, D. D.; Gates, S. M. · The Journal of Chemical Physics · 1993
Atomic layer epitaxy of Si on Ge(100): Direct recoiling studies of film morphologyKoleske, D. D.; Gates, S. M. · Journal of Applied Physics · 1994
Surface morphology of Si on Si(100) grown below 500 °C using H/Cl exchange chemistryKoleske, D. D.; Gates, S. M. · Journal of Applied Physics · 1993
Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogenKoleske, D. D.; Gates, S. M. · Applied Physics Letters · 1994
Steered transition path samplingGuttenberg, Nicholas; Dinner, Aaron R.; Weare, Jonathan · The Journal of Chemical Physics · 2012
Mixing normal and anomalous diffusionGeyer, Tihamér · The Journal of Chemical Physics · 2012
Perspective: Supercooled liquids and glassesEdiger, M. D.; Harrowell, Peter · The Journal of Chemical Physics · 2012
Microwave Absorption in Compressed CO2Ho, W. · The Journal of Chemical Physics · 1966
Perspective: Nonadiabatic dynamics theoryTully, John C. · The Journal of Chemical Physics · 2012
Thermodynamics of Crystals and MeltingBorn, Max · The Journal of Chemical Physics · 1939
Magnetic Equivalence of Nuclear SpinsMusher, J. I. · The Journal of Chemical Physics · 1967
Equation of State for Hard SpheresThiele, Everett · The Journal of Chemical Physics · 1963