![[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technology]()
[IEEE 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition - San Francisco, CA, USA (15-17 Feb. 1999)] 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278) - A 130 mm/sup 2/ 256 Mb NAND flash with shallow trench isolation technologyImamiya, K.; Sugiura, Y.; Nakamura, H.; Himeno, T.; Takeuchi, K.; Ikehashi, T.; Kanda, K.; Hosono, K.; Shirota, R.; Aritome, S.; Shimizu, K.; Hatakeyama, K.; Sakui, K. · 1999