Antimony Concentration in Silicon Epitaxial Layer Formed by Partially Ionized Vapor Deposition
- 期刊名称Japanese Journal of Applied Physics
- 作者Itoh, Tadatsugu; Nakamura, Tohru; Muromachi, Masashi; Sugiyama, Tetsuya
- 卷第15卷
- 期第6期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小219.46KB
- 发表时间1976-6
- DOI10.1143/JJAP.15.1145
- 页码1145-1146
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