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Ion range statistics by a Fourier series : A. G. K. Lutsch. Microelectron. J.14 (1), 5 (1983)1983
Source for doubly charged ionsH.F. Le Roux; A.G.K. Lutsch; B.M. Lacquet · 1985
Contribution to ion implantation through a narrow slit at higher energiesA.G.K. Lutsch; H. Runge · 1983
Contribution to range statistics of Boron implanted into Silicon at high energiesA.G.K. Lutsch; C.A.B. Ball; F.D. Auret; H.C. Snyman · 1981
Time-resolved scanned electron beam annealing of ion-implanted polycrystalline siliconE.F. Krimmel; A.G.K. Lutsch · 1984
Ion distribution near a mask edge with arbitrary shape for VLSI IC applicationsA.G.K. Lutsch; D.R. Oosthuizen · 1985
I2L speed improvement by an ion implantation modification to a standard bipolar processJ.P. Pieters; A.G.K. Lutsch; H.F. le Roux · 1983
Energy saving production of silicon single crystal solar cells by ion implantation and laser annealingE.F. Krimmel; A.G.K. Lutsch; J.S.H. Moolman; H. Runge; P.L. Swart · 1980