An investigation of performance limits of conventional andR. Grassi; A. Gnudi; E. Gnani; S. Reggiani; G. Baccarani · 2009

Numerical investigation on the junctionless nanowire FETE. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong · 2012

Semiclassical transport in silicon nanowire FETs including surface roughnessM. Lenzi; A. Gnudi; S. Reggiani; E. Gnani; M. Rudan; G. Baccarani · 2008

Modeling of gate-all-around charge trapping SONOS memory cellsE. Gnani; S. Reggiani; A. Gnudi; G. Baccarani; J. Fu; N. Singh; G.Q. Lo; D.L. Kwong · 2010

Theoretical analysis of the vertical LOCOS DMOS transistor with process-induced stress enhancementS. Reggiani; M. Denison; E. Gnani; A. Gnudi; G. Baccarani; S. Pendharkar; R. Wise · 2010

Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insightS. Poli; S. Reggiani; G. Baccarani; E. Gnani; A. Gnudi; M. Denison; S. Pendharkar; R. Wise · 2011

Analytical model of thin-body InGaAs-on-InP MOSFET low-field electron mobility for integration in TCAD toolsG. Betti Beneventi; S. Reggiani; A. Gnudi; E. Gnani; A. Aliane; N. Collaert; A. Mocuta; A. Thean; G. Baccarani · 2015