![Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistors]()
Investigation of zinc interstitial ions as the origin of anomalous stress-induced hump in amorphous indium gallium zinc oxide thin film transistorsKim, Yu-Mi; Jeong, Kwang-Seok; Yun, Ho-Jin; Yang, Seung-Dong; Lee, Sang-Youl; Kim, Yeong-Cheol; Jeong, Jae-Kyeong; Lee, Hi-Deok; Lee, Ga-Won · Applied Physics Letters · 2013