![The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO<sub>2</sub> Interface]()
The Influence of Excess Nitrogen, on the Electrical Properties of the 4H-SiC/SiO<sub>2</sub> InterfacePintilie, Ioana; Moscatelli, Francesco; Nipoti, Roberta; Poggi, Antonella; Solmi, Sandro; Løvlie, Lars S.; Svensson, Bengt G. · Materials Science Forum · 2011