Walt Whitman in Italy
- 期刊名称Italica
- 作者Rea McCain
- 卷第20卷
- 期第1期
- 印刷ISSN0021-3020
- 文件大小1520.59KB
- 发表时间1943-03
- DOI10.2307/476681
- 页码4-16
Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxyKazumasa Hiramatsu; Hidetada Matsushima; Takumi Shibata; Yasutoshi Kawagachi; Nobuhiko Sawaki · 1999
Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten MaskKawaguchi, Yasutoshi; Nambu, Shingo; Sone, Hiroki; Yamaguchi, Masahito; Miyake, Hideto; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Iyechika, Yasushi; Maeda, Takayoshi · MRS Proceedings · 1998
Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (ELO) of GaN using Tungsten MaskKawaguchi, Yasutoshi; Nambu, Shingo; Sone, Hiroki; Yamaguchi, Masahito; Miyake, Hideto; Hiramatsu, Kazumasa; Sawaki, Nobuhiko; Iyechika, Yasushi; Maeda, Takayoshi · MRS Internet Journal of Nitride Semiconductor Research · 1999
Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO)Matsushima, Hidetada; Yamaguchi, Masahito; Hiramatsu, Kazumasa; Sawaki, Nobuhiko · Journal of Crystal Growth · 1998
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE GrowthK. Hiramatsu; K. Nishiyama; A. Motogaito; H. Miyake; Y. Iyechika; T. Maeda · 1999
Optical data storage in InGaN/GaN heterostructuresShmagin, I. K.; Muth, J. F.; Kolbas, R. M.; Dupuis, R. D.; Grudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, D. J. H. · Applied Physics Letters · 1997
Tem Study of Defects in Laterally Overgrown GaN LayersLiliental-Weber, Z.; Benamara, M.; Swider, W.; Washburn, J.; Park, J.; Grudowski, P. A.; Eiting, C. J.; Dupuis, R. D. · MRS Proceedings · 1998
TEM Study of Defects in Laterally Overgrown GaN LayersLiliental-Weber, Z.; Benamara, M.; Swider, W.; Washburn, J.; Park, J.; Grudowski, P. A.; Eiting, C. J.; Dupuis, R. D. · MRS Internet Journal of Nitride Semiconductor Research · 1999
Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor depositionGrudowski, P. A.; Eiting, C. J.; Park, J.; Shelton, B. S.; Lambert, D. J. H.; Dupuis, R. D. · Applied Physics Letters · 1997
Micronewton electromagnetic thrusterCharrier, D. S. H. · Applied Physics Letters · 2012
Electrowetting control of bouncing jetsNoblin, Xavier; Celestini, Franck · Applied Physics Letters · 2012
Microstructural heterogeneity and dynamic shear localizationOsovski, S.; Rittel, D. · Applied Physics Letters · 2012
Quantum-secured imagingMalik, Mehul; Magaña-Loaiza, Omar S.; Boyd, Robert W. · Applied Physics Letters · 2012
Graphene-based ferromagnetic superconductorsVahid Hosseini, Mir; Zareyan, Malek · Applied Physics Letters · 2012
Dual electrode cantilevers for ohmic microscopyIgnatowitz, Markus; Oesterschulze, Egbert · Applied Physics Letters · 2012
Superradiant Raman laser magnetometerWeiner, Joshua M.; Cox, Kevin C.; Bohnet, Justin G.; Chen, Zilong; Thompson, James K. · Applied Physics Letters · 2012
Yb3+Er3+ GLASS LASERSnitzer, E.; Woodcock, R. · Applied Physics Letters · 1965