Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface
- 期刊名称Japanese Journal of Applied Physics
- 作者Kuroda, Rihito; Teramoto, Akinobu; Nakao, Yukihisa; Suwa, Tomoyuki; Konda, Masahiro; Hasebe, Rui; Li, Xiang; Isogai, Tatsunori; Tanaka, Hiroaki; Sugawa, Shigetoshi; Ohmi, Tadahiro
- 卷第48卷
- 期第4期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小267.00KB
- 发表时间2009-4-20
- DOI10.1143/JJAP.48.04C048
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